CHIRPING IN 1.55 MU-M VAPOR-PHASE-TRANSPORT DISTRIBUTED FEEDBACK (VPTDFB) SEMICONDUCTOR-LASERS UNDER PICOSECOND GAIN SWITCHING AND 4 GHZ MODULATION

被引：6

作者：

LIN, CL

KOCH, TL

机构：

[1] AT&T Bell Lab, Holmdel, NJ, USA, AT&T Bell Lab, Holmdel, NJ, USA

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 21期

关键词：

D O I：

10.1049/el:19850677

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：958 / 960

页数：3

共 12 条

[1]

CROFT TD, 1985, OFC 85 SAN DIEGO

[2]

GNAUCK AH, 1985, OFC 85 SAN DIEGO

[3]

KASPER BL, 1984, ECOC 84 STUTTGART

[4] 1.55-MU-M INGAASP DISTRIBUTED FEEDBACK VAPOR-PHASE TRANSPORTED BURIED HETEROSTRUCTURE LASERS [J].

KOCH, TL ;

BRIDGES, TJ ;

BURKHARDT, EG ;

CORVINI, PJ ;

COLDREN, LA ;

LINKE, RA ;

TSANG, WT ;

LOGAN, RA ;

JOHNSON, LF ;

KAZARINOV, RF ;

YEN, R ;

WILT, DP .

APPLIED PHYSICS LETTERS, 1985, 47 (01) :12-14

[5] NATURE OF WAVELENGTH CHIRPING IN DIRECTLY MODULATED SEMICONDUCTOR-LASERS [J].

KOCH, TL ;

BOWERS, JE .

ELECTRONICS LETTERS, 1984, 20 (25-2) :1038-1040

[6]

KOCH TL, 1985, CLEO 85 BALTIMORE

[7]

KOROTKY SK, 1985, OFC 85 SAN DIEGO

[8] REDUCTION OF FREQUENCY CHIRPING AND DYNAMIC LINEWIDTH IN HIGH-SPEED DIRECTLY MODULATED SEMICONDUCTOR-LASERS BY INJECTION LOCKING [J].

LIN, C ;

MENGEL, F .

ELECTRONICS LETTERS, 1984, 20 (25-2) :1073-1075

[9] PICOSECOND FREQUENCY CHIRPING AND DYNAMIC LINE BROADENING IN INGAASP INJECTION-LASERS UNDER FAST EXCITATION [J].

LIN, C ;

LEE, TP ;

BURRUS, CA .

APPLIED PHYSICS LETTERS, 1983, 42 (02) :141-143

[10]

OLSSON NA, 1985, J LIGHTWAVE TECHNOL, V3, P63

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