ATOMIC-STRUCTURE OF EPITAXIAL ER SILICIDES GROWN ON SI(111) STUDIED BY SURFACE EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE

被引：22

作者：

TUILIER, MH ^{[1
]}

PIRRI, C ^{[1
]}

WETZEL, P ^{[1
]}

GEWINNER, G ^{[1
]}

VEUILLEN, JY ^{[1
]}

TAN, TAN ^{[1
]}

机构：

[1] CNRS, LEPES, F-38402 GRENOBLE 9, FRANCE

来源：

SURFACE SCIENCE | 1994年 / 307卷

关键词：

D O I：

10.1016/0039-6028(94)91481-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

ErSi2-x silicides, bulk and epitaxially grown on Si(111), are investigated by X-ray absorption spectroscopy at Er L edges in order to determine the effects of the relaxation due to the silicon vacancies on the local environment of erbium in those materials. The value of the shortest Er-Si bond length derived from the L1 edge data is found to be 2.95 +/- 0.03 angstrom, in agreement with previous neutron diffraction data giving an orthorhombic-hexagonal deformation of the AlB2 structure where the Si vacancies are ordered. The same bond length is deduced from L3 edge data recorded from epitaxial film. This result is consistent with a simple model for the relaxation due to the vacancies in these epitaxial films, where the hexagonal symmetry is preserved. The effect of the strain due to the mismatch to the Si substrate is also evidenced from EXAFS. Preliminary results on a two-dimensional erbium silicide layer are given, showing the strong anisotropy of Er environment for one monolayer Er coverage.

引用

页码：710 / 715

页数：6

共 19 条

[1] MAGNETIC-PROPERTIES VERSUS CRYSTAL-STRUCTURE IN HEAVY RARE-EARTH SILICIDES RSI2-X [J].

AUFFRET, S ;

PIERRE, J ;

LAMBERTANDRON, B ;

MADAR, R ;

HOUSSAY, E ;

SCHMITT, D ;

SIAUD, E .

PHYSICA B, 1991, 173 (03) :265-276

[2] CRYSTALLOGRAPHIC AND MAGNETIC-STRUCTURES OF ER3SI5 [J].

AUFFRET, S ;

PIERRE, J ;

LAMBERT, B ;

SOUBEYROUX, JL ;

CHROBOCZEK, JA .

PHYSICA B, 1990, 162 (03) :271-280

[3] BOND LENGTHS AND COORDINATION NUMBERS FROM L2,3-EDGE VERSUS K-EDGE SURFACE EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE [J].

CITRIN, PH .

PHYSICAL REVIEW B, 1985, 31 (02) :700-721

[4] FABRICATION AND STRUCTURE OF EPITAXIAL ER SILICIDE FILMS ON (111) SI [J].

DAVITAYA, FA ;

PERIO, A ;

OBERLIN, JC ;

CAMPIDELLI, Y ;

CHROBOCZEK, JA .

APPLIED PHYSICS LETTERS, 1989, 54 (22) :2198-2200

[5]

GHETTA V, 1989, CR ACAD SCI II, V309, P995

[6] VALENCE FLUCTUATIONS OF YTTERBIUM IN SILICON-RICH COMPOUNDS [J].

IANDELLI, A ;

PALENZONA, A ;

OLCESE, GL .

JOURNAL OF THE LESS-COMMON METALS, 1979, 64 (02) :213-220

[7]

Knapp J. A., 1986, Thin Films - Interfaces and Phenomena. Part of the Fall 1985 Meeting of the Materials Research Society, P261

[8] EPITAXIAL-GROWTH OF RARE-EARTH SILICIDES ON (111) SI [J].

KNAPP, JA ;

PICRAUX, ST .

APPLIED PHYSICS LETTERS, 1986, 48 (07) :466-468

[9] X-RAY-ABSORPTION STUDY OF RHENIUM L3 AND L1 EDGES IN REO3 - MULTIPLE-SCATTERING APPROACH [J].

KUZMIN, A ;

PURANS, J ;

BENFATTO, M ;

NATOLI, CR .

PHYSICAL REVIEW B, 1993, 47 (05) :2480-2486

[10] THE INFLUENCE OF GROWTH TECHNIQUES ON THE STRUCTURE OF EPITAXIAL ERSI1.7 ON SI(111) [J].

LOLLMAN, DBB ;

TAN, TAN ;

VEUILLEN, JY ;

MURET, P ;

LEFKI, K ;

BRUNEL, M ;

DUPUY, JC .

APPLIED SURFACE SCIENCE, 1993, 65-6 :704-711

← 1 2 →