MAGNETORESISTANCE AND STRUCTURAL-PROPERTIES OF COFE/CU MULTILAYERS

被引：9

作者：

KANAI, H

WHITE, RL

机构：

[1] Fujitsu Laboratories, Atsugi, 10-1, Morinosato-Wakamiya

[2] Department of Materials Science and Engineering, Stanford University, Stanford

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1993年 / 29卷 / 06期

关键词：

D O I：

10.1109/20.280929

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the successful use of Co90Fe10 as a buffer layer for the fabrication of giant magnetoresistance (GMR) films on silicon or glass, evidence that the GMR is not sensitive to the degree of [111] orientation in the films, and evidence that the improved GMR in the buffered films with thin spacers results from reduced interface roughness and improved superlattice structure in these films.

引用

页码：2729 / 2731

页数：3

共 6 条

[1]

JHNSON MT, 1992, PHYS REV LETT, V69, P969

[2] GIANT MAGNETORESISTANCE IN NI-FE/CU MULTILAYERS FORMED BY ION-BEAM SPUTTERING [J].