GETTERING OF METALS BY HE INDUCED VOIDS IN SILICON

被引：74

作者：

RAINERI, V ^{[1
]}

BATTAGLIA, A ^{[1
]}

RIMINI, E ^{[1
]}

机构：

[1] UNIV CATANIA,DIPARTMENTO FIS,I-95129 CATANIA,ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 96卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(94)00493-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

He bubbles were formed in Si substrates implanting He at doses ranging from 5 X 10(15)/cm(2) to 1 X 10(17)/cm(2) and energies in the range of 40-300 keV. Bubbles are formed only if a dose of 1 X 10(16)/cm(2) at 40 keV is exceeded, while at 300 keV a dose of 5 X 10(16)/cm(2) has to be reached. If bubbles are present in the as-implanted sample after annealing at 700 degrees C voids are formed. The void evolution during subsequent thermal processing was studied in detail. The thermal stability is found to be excellent for long thermal treatments and an increase in the void diameter with increasing the annealing temperature was observed. The gettering reactivity of these voids is higher than for conventional gettering processes.

引用

页码：249 / 252

页数：4

共 3 条

[1]

BORLAND J, 1993, SOLID STATE TECH DEC, P28

[2] HELIUM DESORPTION PERMEATION FROM BUBBLES IN SILICON - A NOVEL METHOD OF VOID PRODUCTION [J].