AN EMPIRICAL-MODEL FOR THE ELECTRONIC STOPPING OF BORON IN SILICON

被引：5

作者：

HOBLER, G

POTZL, H

PALMETSHOFER, L

SCHORK, R

LORENZ, J

TIAN, C

GARA, S

STINGEDER, G

机构：

[1] VIENNA TECH UNIV,INST ALLGEMEINE ELEKTROTECH & ELEKTRON,A-1040 VIENNA,AUSTRIA

[2] LUDWIG BOLTZMANN INST FESTKORPERPHYS,A-1060 VIENNA,AUSTRIA

[3] UNIV LINZ,INST EXPTL PHYS,A-4045 LINZ,AUSTRIA

[4] FRAUNHOFER ARBEITSGRP INTEGRIERTE SCHALTUNGEN,W-8520 ERLANGEN,GERMANY

[5] TECH UNIV WIEN,INST ANALYT CHEM,A-1060 VIENNA,AUSTRIA

来源：

COMPEL-THE INTERNATIONAL JOURNAL FOR COMPUTATION AND MATHEMATICS IN ELECTRICAL AND ELECTRONIC ENGINEERING | 1991年 / 10卷 / 04期

关键词：

D O I：

10.1108/eb051709

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

A three-parameter model for the electronic stopping power of boron in silicon is presented. The model parameters are determined from implantations into amorphous silicon and from channeling implantations into <100> and <110> silicon. Simulated boron profiles obtained with the new model, with the Lindhard model, and with the Oen-Robinson model, respectively, are compared with experimental data on channeling and tilted implantations at 17 and 150 keV.

引用

页码：323 / 330

页数：8

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