COMPARISON BETWEEN ESR AND CPM FOR THE GAP STATES IN A-SI-GE-H

被引：3

作者：

KUMEDA, M ^{[1
]}

AWAKI, N ^{[1
]}

YAN, H ^{[1
]}

MORIMOTO, A ^{[1
]}

SHIMIZU, T ^{[1
]}

WATANABE, T ^{[1
]}

机构：

[1] HITACHI LTD, CENT RES LAB, KOKUBUNJI, TOKYO 185, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 6B期

关键词：

HYDROGENATED AMORPHOUS SI-GE ALLOYS; ESR; CPM; DANGLING BONDS;

D O I：

10.1143/JJAP.30.L1079

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si dangling bonds and Ge dangling bonds in a-Si1-xGe(x):H are separately estimated both by low-energy optical absorption measurements using a constant photocurrent method (CPM) and by ESR measurements. The ratio of the density of Si dangling bonds to that of Ge dangling bonds decreases with increasing germanium content, as expected. However, the ratio deduced from CPM is far larger than that deduced from ESR. Origins of the difference are discussed.

引用

页码：L1079 / L1082

页数：4

共 11 条

[1] INFLUENCE OF THE EXCHANGE INTERACTION ON THE ESR LINEWIDTH IN AMORPHOUS SILICON [J].

BACHUS, R ;

MOVAGHAR, B ;

SCHWEITZER, L ;

VOGETGROTE, U .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 39 (01) :27-37

[2] ELECTRON-SPIN-RESONANCE (ELECTRON-SPIN-RESONANCE AND LESR) STUDIES IN A-SI1-XGEX-H [J].

FINGER, F ;

CARIUS, R ;

FUHS, W ;

SCHRIMPF, A .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :731-734

[3] A SIMPLE MOLECULAR-ORBITAL CALCULATION OF ELECTRON-SPIN-RESONANCE G-VALUES FOR AMORPHOUS SI1-XCX, SI1-XGEX AND GE1-XCX [J].

ISHII, N ;

KUMEDA, M ;

SHIMIZU, T .

SOLID STATE COMMUNICATIONS, 1982, 41 (02) :143-146

[4] GUIDING PRINCIPLE IN THE PREPARATION OF HIGH-PHOTOSENSITIVE HYDROGENATED AMORPHOUS SI-GE ALLOYS FROM GLOW-DISCHARGE PLASMA [J].

MATSUDA, A ;

KOYAMA, M ;

IKUCHI, N ;

IMANISHI, Y ;

TANAKA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01) :L54-L56

[5]

MOORE CE, 1949, ATOMIC ENERGY LEVELS, P135

[6] ELECTRON-SPIN-RESONANCE AND IR STUDIES ON A-SI1-XGEX-H PREPARED BY GLOW-DISCHARGE DECOMPOSITION [J].

MORIMOTO, A ;

MIURA, T ;

KUMEDA, M ;

SHIMIZU, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) :L833-L836

[7]

SALA SD, 1990, J APPL PHYS, V67, P814

[8] SURFACE AND BULK DEFECTS IN HYDROGENATED AMORPHOUS-SILICON AND SILICON-BASED ALLOY-FILMS [J].

SHIMIZU, T ;

XU, XX ;

KIDOH, H ;

MORIMOTO, A ;

KUMEDA, M .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (10) :5045-5049

[9] NATURE OF LOCALIZED STATES IN HYDROGENATED SI-BASED AMORPHOUS-SEMICONDUCTOR FILMS ELUCIDATED FROM LESR AND CPM [J].

SHIMIZU, T ;

KIDOH, H ;

MORIMOTO, A ;

KUMEDA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (04) :586-592

[10] STRUCTURAL, OPTICAL, AND SPIN PROPERTIES OF HYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOYS [J].

STUTZMANN, M ;

STREET, RA ;

TSAI, CC ;

BOYCE, JB ;

READY, SE .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (02) :569-592

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