A COMPARISON OF IONIZING-RADIATION DAMAGE IN MOSFETS FROM CO-60 GAMMA-RAYS, 0.5 TO 22 MEV PROTONS AND 1 TO 7 MEV ELECTRONS

被引:27
作者
TALLON, RW
ACKERMANN, MR
KEMP, WT
OWEN, MH
SAUNDERS, DP
机构
关键词
D O I
10.1109/TNS.1985.4334130
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:4393 / 4398
页数:6
相关论文
共 12 条
[1]  
ACKERMANN MR, 1984, 16TH NAT SAMPE TECH, P237
[2]  
BERGER MJ, 1982, NBS IR822550
[3]   THE DAMAGE EQUIVALENCE OF ELECTRONS, PROTONS, AND GAMMA-RAYS IN MOS DEVICES [J].
BRUCKER, GJ ;
STASSINOPOULOS, EG ;
VANGUNTEN, O ;
AUGUST, LS ;
JORDAN, TM .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :1966-1969
[4]   THERMO-LUMINESCENCE RESPONSE OF LITHIUM-FLUORIDE TO ENERGETIC LIGHT-IONS [J].
CHANG, J ;
STAUBER, M .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :1960-1965
[5]  
JANNI JF, 1982, ATOMIC DATA NUCLEAR, V27, P486
[6]   DOSE-RATE EFFECTS IN PERMANENT THRESHOLD VOLTAGE SHIFTS OF MOS-TRANSISTORS [J].
MAIER, RJ ;
TALLON, RW .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2214-2218
[7]   RADIATION-INDUCED SPACE-CHARGE BUILDUP IN MOS STRUCTURES [J].
MITCHELL, JP .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) :764-+
[8]   ANALYSIS OF DAMAGE IN MOS DEVICES FOR SEVERAL RADIATION ENVIRONMENTS [J].
OLDHAM, TR .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1236-1241
[9]   IONIZATION OF SIO2 BY HEAVY CHARGED-PARTICLES [J].
OLDHAM, TR ;
MCGARRITY, JM .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :3975-3980
[10]   TOTAL-DOSE AND DOSE-RATE DEPENDENCE OF PROTON DAMAGE IN MOS DEVICES DURING AND AFTER IRRADIATION [J].
STASSINOPOULOS, EG ;
BRUCKER, GJ ;
VANGUNTEN, O .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1444-1447