DOUBLE INJECTION IN SEMICONDUCTORS

被引：12

作者：

MIGLIORATO, P

MARGARITONDO, G

PERFETTI, P

机构：

[1] CNR,LAB ELETTR STATO SOLIDO,GRP NAZL STRUTTURA MAT,00156 ROME,ITALY

[2] UNIV ROME,IST FIS,GRP NAZL STRUTTURA MAT,00100 ROME,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 02期

关键词：

D O I：

10.1063/1.322629

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：656 / 663

页数：8

共 20 条

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[2] GAAS-MN DOUBLE-INJECTION DEVICES [J].

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[3]

BARON R, 1970, SEMICONDUCTORS SEMIM, V6

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[5]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[6]

BYKOVSKII YA, 1968, SOV PHYS SEMICOND, V1, P1259

[7] VARIATION OF ELECTRICAL PROPERTIES WITH ZN CONCENTRATION IN GAP [J].

CASEY, HC ;

ERMANIS, F ;

WOLFSTIRN, KB .

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[8] OPTICAL PROPERTIES OF GROUP 4 ELEMENTS CARBON AND SILICON IN GALLIUM PHOSPHIDE [J].

DEAN, PJ ;

FROSCH, CJ ;

HENRY, CH .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) :5631-&

[9] DOUBLE INJECTION CURRENTS IN LONG P-I-N DIODES WITH ONE TRAPPING LEVEL [J].

DEULING, HJ .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) :2179-&

[10]

HIRAMATSU M, 1973, JPN J APPL PHYS, V12, P415, DOI 10.1143/JJAP.12.415

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