ELECTRICAL CHARACTERISTICS OF INASSB/GASB HETEROJUNCTIONS

被引：38

作者：

SRIVASTAVA, AK ^{[1
]}

ZYSKIND, JL ^{[1
]}

LUM, RM ^{[1
]}

DUTT, BV ^{[1
]}

KLINGERT, JK ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 01期

关键词：

D O I：

10.1063/1.97077

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：41 / 43

页数：3

共 13 条

[1]

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[2]

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ESAKI, L .

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[8] IN1-XGAXAS-GASB1-YASY HETEROJUNCTIONS BY MOLECULAR-BEAM EPITAXY [J].

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[9] LIQUID-PHASE EPITAXY OF IN(AS,SB) ON GASB SUBSTRATES USING ANTIMONY-RICH MELTS [J].

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[10]

SZE SM, 1981, PHYSICS SEMICONDUCTO

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