POWER GAAS-MESFET - RELIABILITY ASPECTS AND FAILURE MECHANISMS

被引：13

作者：

CANALI, C

CASTALDO, F

ZANONI, E

机构：

[1] IST RIC SCI & TECNOL,I-38050 POVO,ITALY

[2] DIPARTIMENTO FIS,I-41100 MODENA,ITALY

[3] TELETTRA SPA,I-20059 VIMERCATE,ITALY

来源：

MICROELECTRONICS AND RELIABILITY | 1984年 / 24卷 / 05期

关键词：

D O I：

10.1016/0026-2714(84)90025-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：947 / 955

页数：9

共 11 条

[1]

BINOTTO L, UNPUB

[2]

Davey J. E., 1981, Reliability and degradation. Semiconductor devices and circuits, P237

[3]

Drukier I., 1979, 17th Annual Proceedings Reliability Physics, P150, DOI 10.1109/IRPS.1979.362885

[4] METALLURGICAL BEHAVIOR OF NI/AU-GE OHMIC CONTACTS TO GAAS [J].

ILIADIS, A ;

SINGER, KE .

SOLID STATE COMMUNICATIONS, 1984, 49 (01) :99-101

[5]

IRVIN JC, 1982, GAAS FET PRINCIPLES, P403

[6] INFLUENCE OF THE SURFACE AND THE EPISUBSTRATE INTERFACE ON THE DRAIN CURRENT DRIFT OF GAAS-MESFETS [J].

ITOH, H ;

OHATA, K ;

HASEGAWA, F .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (07) :878-882

[7] THE CHARACTERISTICS OF AU-GE-BASED OHMIC CONTACTS TO N-GAAS INCLUDING THE EFFECTS OF AGING [J].

MARLOW, GS ;

DAS, MB ;

TONGSON, L .

SOLID-STATE ELECTRONICS, 1983, 26 (04) :259-&

[8]

MARZOCCHI G, 1980, TELETTRA REV, V31, P43

[9] DIFFUSION BARRIERS IN THIN-FILMS [J].

NICOLET, MA .

THIN SOLID FILMS, 1978, 52 (03) :415-443

[10]

NOVICKI RS, 1978, THIN SOLID FILMS, V53, P195

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