LATTICE-RELAXATION IN ALUMINUM MONOLAYERS

被引：19

作者：

BATRA, IP

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.573143

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1603 / 1606

页数：4

共 53 条

[31] CALCULATION OF HIGH-PRESSURE PHASES OF AL
LAM, PK
COHEN, ML
[J]. PHYSICAL REVIEW B, 1983, 27 (10): : 5986 - 5991
[32] MORPHOLOGICAL AND CHEMICAL CONSIDERATIONS FOR THE EPITAXY OF METALS ON SEMICONDUCTORS
LUDEKE, R
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 400 - 406
[33] ABINITIO CALCULATION OF INTER-ATOMIC POTENTIALS AND ELECTRONIC-PROPERTIES OF A SIMPLE METAL-AL
MANNINEN, M
JENA, P
NIEMINEN, RM
LEE, JK
[J]. PHYSICAL REVIEW B, 1981, 24 (12): : 7057 - 7070
[34] EPITAXIAL RELATIONSHIPS BETWEEN AL, AG AND GAAS(001) SURFACES
MASSIES, J
LINH, NT
[J]. SURFACE SCIENCE, 1982, 114 (01) : 147 - 160
[35] Matthews J.W, 1975, EPITAXIAL GROWTH
[36] MATTHEWS JW, 1975, EPITAXIAL GROWTH B
[37] MORUZZI VL, 1978, CALCULATED ELECTRONI
[38] NIEDERMEYER R, 1968, THIN FILMS, V1, P25
[39] LEVEL ORDERING OF STATES IN A CU (001) MONOLAYER
PAINTER, GS
[J]. PHYSICAL REVIEW B, 1978, 18 (02): : 955 - 957
[40] BONDING IN A CU (001) MONOLAYER
PAINTER, GS
[J]. PHYSICAL REVIEW B, 1978, 17 (10): : 3848 - 3852