QUANTUM TRANSPORT IN A SINGLE LAYERED STRUCTURE FOR IMPURITY SCATTERING

[1] QUANTUM SIZE EFFECT IN SEMICONDUCTOR TRANSPORT [J]. PHYSICAL REVIEW B, 1981, 23 (10): : 5570 - 5575

[2] ARORA VK, PHYS REV B

[3] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[4] DINGLE R, 1975, ADV SOLID STATE PHYS, V15, P21

[5] DORDA G, 1973, FESTKORPERPROBLEME, V13, P215

[6] EXPERIMENTAL AND THEORETICAL ELECTRON-MOBILITY OF MODULATION DOPED ALXGA1-XAS-GAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 5231 - 5234

[7] ELINSON MI, 1980, THIN SOLID FILMS, V66, P5

[8] FELL B, 1978, J PHYS CHEM SOLIDS, V34, P221

[9] FERRY D, 1981, VLSI ELECTRONICS MIC, V2, P68

[10] IMPURITY AND PHONON-SCATTERING IN LAYERED STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 484 - 486

[1] QUANTUM SIZE EFFECT IN SEMICONDUCTOR TRANSPORT [J]. PHYSICAL REVIEW B, 1981, 23 (10): : 5570 - 5575

[2] ARORA VK, PHYS REV B

[3] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[4] DINGLE R, 1975, ADV SOLID STATE PHYS, V15, P21

[5] DORDA G, 1973, FESTKORPERPROBLEME, V13, P215

[6] EXPERIMENTAL AND THEORETICAL ELECTRON-MOBILITY OF MODULATION DOPED ALXGA1-XAS-GAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 5231 - 5234

[7] ELINSON MI, 1980, THIN SOLID FILMS, V66, P5

[8] FELL B, 1978, J PHYS CHEM SOLIDS, V34, P221

[9] FERRY D, 1981, VLSI ELECTRONICS MIC, V2, P68

[10] IMPURITY AND PHONON-SCATTERING IN LAYERED STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 484 - 486