SILICIDE EPILAYERS - RECENT DEVELOPMENTS AND PROSPECTS FOR A SI-COMPATIBLE TECHNOLOGY

被引：35

作者：

DERRIEN, J ^{[1
]}

CHEVRIER, J ^{[1
]}

LETHANH, V ^{[1
]}

CRUMBAKER, TE ^{[1
]}

NATOLI, JY ^{[1
]}

BERBEZIER, I ^{[1
]}

机构：

[1] UNIV MARSEILLE 3,CTR RECH MECANISMES CROISSANCE CRISTALLINE,CNRS,F-13288 MARSEILLE 09,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1993年 / 70-1卷 / 1 -4 pt B期

关键词：

D O I：

10.1016/0169-4332(93)90578-Y

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Semiconducting silicides epitaxially grown on silicon may be promising materials for integrated optoelectronic devices. The structure and the physical properties of FeSi2 are reviewed in the light of results obtained with a large variety of in situ and ex situ surface techniques. Dynamical transitions from strained metallic FeSi2 toward relaxed semiconducting FeSi2 and epitaxial FeSi are clearly demonstrated. New developments for silicide heteroepitaxy on silicon using gas-source molecular beam epitaxy are also discussed.

引用

页码：546 / 558

页数：13

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