A NOVEL HETEROEPITAXY METHOD OF GE FILMS ON CAF2 BY ELECTRON-BEAM EXPOSURE

被引：19

作者：

KANEMARU, S ^{[1
]}

ISHIWARA, H ^{[1
]}

FURUKAWA, S ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,GRAD SCH SCI & ENGN,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 04期

关键词：

D O I：

10.1063/1.340007

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1060 / 1064

页数：5

共 17 条

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[4]

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[6]

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[7] IMPROVEMENT OF THE QUALITY OF GE FILMS ON CAF2/SI(111) STRUCTURES BY PREDEPOSITED THIN GE LAYERS [J].

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[8] FORMATION OF A NEW ORDERED STRUCTURE OF CAF2/SI(111) BY ULTRAVIOLET-IRRADIATION [J].

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[9]

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[10]

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