PHOTOVOLTAIC AND PHOTOCONDUCTIVE DUAL-MODE OPERATION GAAS QUANTUM-WELL INFRARED PHOTODETECTOR FOR 2-BAND DETECTION

被引:25
作者
WANG, YH [1 ]
LI, SS [1 ]
PIN, H [1 ]
机构
[1] GE,ELECTR LAB,SYRACUSE,NY 13221
关键词
D O I
10.1063/1.108783
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new photoconductive (PC) and photovoltaic (PV) dual-mode operation quantum well infrared photodetection (DM-QWIP) using an enlarged GaAs (110 angstrom) quantum well and enlarged Al0.25Ga0.75As (875 angstrom) barrier layer has been developed for two-color intersubband detection. The detection scheme uses transitions from the ground-state and the first excited-state inside the enlarged GaAs quantum well to the continuum states slightly above the AlGaAs barrier layers. The detectivity D(lambda)* for the PV mode was found to be 1.5 X 10(9) square-root Hz/W at the peak response wavelength lambda(p)=7.7 mum and T=77 K, while the values of D(lambda)* for the PC mode were found to be 2X10(10), 1X10(10) cm square-root Hz/W for V(b)=1,2 V at lambda(p)=12 mum and T=77 K, respectively.
引用
收藏
页码:93 / 95
页数:3
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