PHOTOVOLTAIC GAAS QUANTUM-WELL INFRARED DETECTORS AT 4.2 MU-M USING INDIRECT ALXGA1-X BARRIERS

被引：48

作者：

LEVINE, BF

GUNAPALA, SD

KOPF, RF

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 14期

关键词：

D O I：

10.1063/1.105175

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated the first bound to continuum state GaAs/Al(x)Ga(1-x)As quantum well infrared detector which has a peak response lambda-p = 4.2-mu-m in the center of the midwavelength (lambda = 3-5-mu-m) infrared band. Although the detector uses indirect Al(x)Ga(1-x)As barriers, excellent hot-electron transport and a high detectivity D-lambda* = 10(12) cm square-root Hz/W were achieved.

引用

页码：1551 / 1553

页数：3

共 19 条

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