HIGHLY SENSITIVE OPTICAL METHOD FOR THE CHARACTERIZATION OF SIO2-FILMS IN BONDED WAFERS

被引：6

作者：

BORGHESI, A

SASSELLA, A

ABE, T

机构：

[1] UNIV PAVIA,DIPARTIMENTO FIS A VOLTA,I-27100 PAVIA,ITALY

[2] SHIN ETSU HANDOTAI,ANNAKA,GUNMA 37901,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 10B期

关键词：

THIN FILMS; BONDED WAFERS; OPTICAL TECHNIQUE; THICKNESS MEASUREMENT;

D O I：

10.1143/JJAP.34.L1409

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The thickness of very thin films (1-10 nanometers thick) and the frequency of the longitudinal optical mode of the material composing the film (related to its chemical and structural properties) are demonstrated to be measurable with high sensitivity by means of infrared transmission. The particular optical configuration proposed permits the analysis of the SiO2 film in bonded wafers. It is shown that the sensitivity of this new method increases as the films are made thinner.

引用

页码：L1409 / L1411

页数：3