VERY HIGH-ENERGY IMPLANTS OF BORON INTO SILICON

被引：4

作者：

LAFERLA, A

RIMINI, E

CIAVOLA, G

FERLA, G

机构：

[1] IST NAZL FIS NUCL,LAB NAZL S,I-95100 CATANIA,ITALY

[2] SGS THOMSON,I-95100 CATANIA,ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 37-8卷

关键词：

D O I：

10.1016/0168-583X(89)90332-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：951 / 954

页数：4

共 10 条

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[7] RANGE DISTRIBUTIONS OF MEV IMPLANTS IN SILICON-II - A COMPARISON OF SIMS AND SPREADING RESISTANCE PROFILES OF B,P AND GA [J].

INGRAM, DC ;

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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) :460-465

[8]

LITTMARK U, 1980, STOPPING RANGES IONS, V6

[9]

MAES H, 1981, MATERIALS PROCESSING, V2, P443

[10]

PRAMENIK D, 1984, SOLID STATE TECHNOL, V5, P211

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