OPTICAL-TRANSITIONS ON GAAS [110] SURFACE

被引：59

作者：

BERKOVITS, VL

MAKARENKO, IV

MINASHVILI, TA

SAFAROV, VI

机构：

[1] Acad of Sciences of the USSR, A. F., Ioffe Physico-Technical Inst,, Leningrad, USSR, Acad of Sciences of the USSR, A. F. Ioffe Physico-Technical Inst, Leningrad, USSR

来源：

SOLID STATE COMMUNICATIONS | 1985年 / 56卷 / 05期

关键词：

D O I：

10.1016/0038-1098(85)90030-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Modulation techniques have been employed in optical reflection measurements on GaAs (110) cleaved surface. Spectral bands at 2. 62 and 2. 83 ev observed for the light polarization E parallel (110) have been assigned to the surface state transitions. The E//1 and E//1 plus DELTA //1 bulk transitions were found to be sensitive to the surface conditions.

引用

页码：449 / 450

页数：2

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