TRANSPORT AND OPTICAL-PROPERTIES OF SEMICONDUCTOR QUANTUM WIRES

被引:14
作者
FORCHEL, A [1 ]
MENSCHIG, A [1 ]
MAILE, BE [1 ]
LEIER, H [1 ]
GERMANN, R [1 ]
机构
[1] UNIV STUTTGART,INST PHYS 4,W-7000 STUTTGART 80,GERMANY
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 02期
关键词
D O I
10.1116/1.585587
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have fabricated III-V semiconductor quantum wires which display a variety of novel transport and optical phenomena. For the definition of structures with widths down to 40 nm high resolution electron beam lithography and dry etching have been used. For the observation of dimensionality dependent effects in optical spectra buried quantum wires have been developed by overgrowth of dry etched structures and implantation induced intermixing. The physical properties of the nanometer structures have been analyzed by magnetotransport studies and emission spectroscopy.
引用
收藏
页码:444 / 450
页数:7
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