STUDY OF DEFECTS IN WIDE-BAND GAP SEMICONDUCTORS BY ELECTRON-PARAMAGNETIC-RESONANCE

被引：34

作者：

FANCIULLI, M ^{[1
]}

MOUSTAKAS, TD ^{[1
]}

机构：

[1] BOSTON UNIV,DEPT ELECT ENGN,BOSTON,MA 02215

来源：

PHYSICA B | 1993年 / 185卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0921-4526(93)90242-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Defects in diamond, baron nitride and gallium nitride, grown by various deposition methods, were investigated by EPR measurements. In diamond films the observed EPR signal has a g value of 2.0028, peak-to-peak linewidth of 3-5 Gauss and spin-lattice relaxation time, at 293 K, of 10(-6) S. In boron nitride films, depending on growth conditions, the g value varies from 2.0024 to 2.0032, the peak-to-peak linewidth varies from 31 to 7 Gauss and the spin-lattice relaxation time at 293 K varies from 10(-5) to 10(-6) s. An EPR signal has not been observed in GaN films at temperatures above 100 K.

引用

页码：228 / 233

页数：6

共 33 条

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