CHARACTERIZATION OF C-13 IMPLANTATIONS IN SILICON BY NRA [C-13(P,GAMMA)N-14] AND RBS

被引:16
作者
THEODOSSIU, W
BAUMANN, H
MARKWITZ, A
BETHGE, K
机构
[1] Institut für Kemphysik, J. W. Goethe-Universität, Frankfurt a.M., D-60486
来源
FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY | 1995年 / 353卷 / 3-4期
关键词
D O I
10.1007/BF00322093
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
SICx layers close to the surface have been produced by implanting 40 keV C-13 ions into silicon with a fluence of 6 x 10(17) at./cm(2) (j = 12 mu A/cm(2)) at room temperature (RT). Depth distributions and areal densities (doses) of the implanted carbon have been analysed by the nuclear reaction C-13(p,gamma)N-14 (NRA) which shows a sharp resonance in the excitation function at a proton energy of 1748 keV (Gamma = 75 eV FWHM). The depth resolution at the surface amounts to 31 nm due to energy spread of the proton beam(1.2 keV FWHM) and resonance width. The surface resolution of the NRA can be increased up to 8 nm when tilting the sample (surface normal) to an angle of 75 degrees with respect to the proton beam direction. Using a NaI detector the detection limit of C-13 in silicon is approximately 1 at.%. Comparative elastic backscattering measurements with He-4(+) projectiles were performed at 2 MeV (Rutherford backscattering spectroscopy, RBS) and 3.45 MeV (high energy backscattering, HEBS) at a backscattering angle of 171 degrees. The measured C-13 depth distributions have been compared with a distribution calculated by the Monte Carlo algorithm T-DYN.
引用
收藏
页码:483 / 486
页数:4
相关论文
共 21 条
[1]   LEVEL ASSIGMENTS IN 017 FROM C13(ALPHA, ALPHA)C13 AND C13(ALPHA,N)016 [J].
BARNES, BK ;
BELOTE, TA ;
RISSER, JR .
PHYSICAL REVIEW, 1965, 140 (3B) :B616-&
[3]   A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS [J].
BIERSACK, JP ;
HAGGMARK, LG .
NUCLEAR INSTRUMENTS & METHODS, 1980, 174 (1-2) :257-269
[5]   FORMATION OF SIC IN SILICON BY ION IMPLANTATION [J].
BORDERS, JA ;
PICRAUX, ST ;
BEEZHOLD, W .
APPLIED PHYSICS LETTERS, 1971, 18 (11) :509-&
[6]  
CAMPBELL RB, 1971, SEMICONDUCTORS SEM B, V7
[7]   TERRACE GROWTH AND POLYTYPE DEVELOPMENT IN EPITAXIAL BETA-SIC FILMS ON ALPHA-SIC (6H AND 15R) SUBSTRATES [J].
CHIEN, FR ;
NUTT, SR ;
YOO, WS ;
KIMOTO, T ;
MATSUNAMI, H .
JOURNAL OF MATERIALS RESEARCH, 1994, 9 (04) :940-954
[8]  
Chu W.-K., 1978, BACKSCATTERING SPECT
[9]   ISOTOPIC CARBON ANALYSIS USING LOW-ENERGY PROTONS [J].
CLOSE, DA ;
MALANIFY, JJ ;
UMBARGER, CJ .
NUCLEAR INSTRUMENTS & METHODS, 1973, 113 (04) :561-571