MECHANISM OF ETCHING AND OF SURFACE MODIFICATION OF POLYIMIDE IN RF AND LF SF6-O2 DISCHARGES

被引:44
作者
KOGOMA, M [1 ]
TURBAN, G [1 ]
机构
[1] SOPHIA UNIV,FAC SCI & ENGN,CHIYODA KU,TOKYO 102,JAPAN
关键词
ETCHING; -; PLASMAS; Applications; SURFACES; Processing;
D O I
10.1007/BF00565550
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
Etch rates of Kapton H polyimide film in SF//6-O//2 plasmas (0. 25 torr) were studied as a function of the input gas mixture, the excitation frequency (25-450 kHz; 13. 56 MHz), and the biasing mode. The treated surface was examined by X ray photoelectron spectroscopy (ESCA), scanning electron microscopy (SEM), and contact angle measurement. The ion and neutral species of the plasma were sampled and analyzed by mass spectrometry. Etch rates are found to depend on the positive ion flux and the degree of dissociation of neutral molecules. Plasma-treated surfaces are always covered with a deposited material (C//nH//mO//xF//y) which partially obstructs the etching reaction by a masking effect and causes surface roughness.
引用
收藏
页码:349 / 380
页数:32
相关论文
共 26 条
[1]   SIMULTANEOUS FLUORINATION AND FUNCTIONALIZATION OF HYDROCARBON POLYMERS [J].
ADCOCK, JL ;
INOUE, S ;
LAGOW, RJ .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1978, 100 (06) :1948-1950
[2]  
ANAUD M, 1981, POLYMER, V22, P361
[3]  
[Anonymous], HDB XRAY PHOTOELECTR
[4]  
BABU SV, 1985, 7TH P INT S PLASM CH, V3, P1025
[5]  
CLARK DT, 1978, CRC CRIT R SOLID ST, P1
[6]   SURFACE FLUORINATION OF POLYMERS IN A GLOW-DISCHARGE PLASMA - PHOTOCHEMISTRY [J].
CORBIN, GA ;
COHEN, RE ;
BADDOUR, RF .
MACROMOLECULES, 1985, 18 (01) :98-103
[7]  
DILKS A, 1979, ACS SYM SER, V108, P195
[8]   ANISOTROPIC ETCHING OF SIO2 IN LOW-FREQUENCY CF4/O2 AND NF3/AR PLASMAS [J].
DONNELLY, VM ;
FLAMM, DL ;
DAUTREMONTSMITH, WC ;
WERDER, DJ .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (01) :242-252
[9]  
EGITTO F, 1985, 7TH P INT S PLASM CH, V3, P983
[10]   TIME-RESOLVED OPTICAL DIAGNOSTICS OF RADIO-FREQUENCY PLASMAS [J].
GOTTSCHO, RA ;
MANDICH, ML .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :617-624