A SYSTEMATIC-APPROACH TO THE MEASUREMENT OF IDEALITY FACTOR, SERIES RESISTANCE, AND BARRIER HEIGHT FOR SCHOTTKY DIODES

被引:55
作者
LEE, TC
FUNG, S
BELING, CD
AU, HL
机构
[1] Department of Physics, University of Hong Kong, Hong Kong
关键词
D O I
10.1063/1.352082
中图分类号
O59 [应用物理学];
学科分类号
摘要
A nongraphical approach is proposed for measuring and evaluating the ideality n factor and the series resistance of a Schottky diode. The approach involves the use of an auxiliary function and a computer-fitting routine. This technique has been found to be both accurate and reliable. The validity of this has also been confirmed by way of I-V measurements using both commercially available and laboratory-prepared Schottky diodes.
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页码:4739 / 4742
页数:4
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