SCHOTTKY DIODE - COMMENTS CONCERNING THE DIODE PARAMETERS DETERMINATION FROM THE FORWARD IV PLOT

被引：16

作者：

MANIFACIER, JC

BRORTRYB, N

ARDEBILI, R

CHARLES, JP

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 05期

关键词：

D O I：

10.1063/1.341632

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2502 / 2504

页数：3

共 12 条

[1]

ARFKEN G, 1985, MATH METHODS PHYS, P945

[2] GENERALIZED NORDE PLOT INCLUDING DETERMINATION OF THE IDEALITY FACTOR [J].

BOHLIN, KE .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) :1223-1224

[3] A CRITICAL-STUDY OF THE EFFECTIVENESS OF THE SINGLE AND DOUBLE EXPONENTIAL MODELS FOR IV CHARACTERIZATION OF SOLAR-CELLS [J].

CHARLES, JP ;

MEKKAOUIALAOUI, I ;

BORDURE, G ;

MIALHE, P .

SOLID-STATE ELECTRONICS, 1985, 28 (08) :807-820

[4] EXTRACTION OF SCHOTTKY DIODE PARAMETERS FROM FORWARD CURRENT-VOLTAGE CHARACTERISTICS [J].

CHEUNG, SK ;

CHEUNG, NW .

APPLIED PHYSICS LETTERS, 1986, 49 (02) :85-87

[5] FORWARD IV PLOT FOR NONIDEAL SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE [J].

CIBILS, RM ;

BUITRAGO, RH .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :1075-1077

[6]

Henisch H K., 1984, SEMICONDUCTOR CONTAC

[7]

Lampert M.A., 1970, CURRENT INJECTION SO

[8]

LAMPERT MA, 1970, SEMICONDUCT SEMIMET, V6, pCH1

[9] MODIFIED FORWARD IV PLOT FOR SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE [J].

NORDE, H .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :5052-5053

[10] STUDY OF FORWARD IV PLOT FOR SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE [J].

SATO, K ;

YASUMURA, Y .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (09) :3655-3657

← 1 2 →