QUANTITATIVE-EVALUATION OF GATE OXIDE DAMAGE DURING PLASMA PROCESSING USING ANTENNA-STRUCTURE CAPACITORS

Plasma-induced damage of gate oxides is evaluated from the difference between the intrinsic charge-to-breakdown (Q(BD)) and the residual Q(BD) This difference, Delta Q(BD), corresponds to the plasma-induced damage to the oxide and to the accumulation of conduction current from the plasma into the oxide. It is shown experimentally that the plasma-induced damage Delta Q(BD) increases in proportion to the antenna ratio (exposed antenna area/gate area). The Delta Q(BD) Of the antenna capacitor depends not on the device structures such as the gate oxide thickness, but on the plasma process conditions.