ASYMMETRIES IN ATOMIC INTERMIXING AT AU/GE AND GE/AU INTERFACES

被引：33

作者：

RUCKMAN, MW ^{[1
]}

JOYCE, JJ ^{[1
]}

BOSCHERINI, F ^{[1
]}

WEAVER, JH ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT CHEM ENGN & MAT SCI,MINNEAPOLIS,MN 55455

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.34.5118

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5118 / 5124

页数：7

共 29 条

[1] PHOTOEMISSION INVESTIGATION OF THE TEMPERATURE EFFECT ON SI-AU INTERFACES [J].

ABBATI, I ;

BRAICOVICH, L ;

FRANCIOSI, A ;

LINDAU, I ;

SKEATH, PR ;

SU, CY ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :930-935

[2]

[Anonymous], 1984, B ALLOY PHASE DIAGR

[3]

BISI O, 1982, J PHYS C SOLID STATE, V15, P470

[4]

BRAICOVICH L, 1980, J VAC SCI TECHNOL, V17, P930

[5]

BUTERA RA, 1986, PHYS REV B, V33, P3081

[6]

DANIELS RR, 1981, PHYS REV LETT, V47, P875

[7] CLUSTER FORMATION AND ATOMIC INTERMIXING AT THE REACTIVE V/GE(111) INTERFACE [J].

DELGIUDICE, M ;

JOYCE, JJ ;

RUCKMAN, MW ;

WEAVER, JH .

PHYSICAL REVIEW B, 1985, 32 (08) :5149-5155

[8] AU-SI INTERFACE FORMATION - THE OTHER SIDE OF THE PROBLEM [J].

FRANCIOSI, A ;

NILES, DW ;

MARGARITONDO, G ;

QUARESIMA, C ;

CAPOZI, M ;

PERFETTI, P .

PHYSICAL REVIEW B, 1985, 32 (10) :6917-6919

[9] CLUSTER-INDUCED REACTIONS AT A METAL-SEMICONDUCTOR INTERFACE - CE ON SI(111) [J].

GRIONI, M ;

JOYCE, J ;

CHAMBERS, SA ;

ONEILL, DG ;

DELGIUDICE, M ;

WEAVER, JH .

PHYSICAL REVIEW LETTERS, 1984, 53 (24) :2331-2334

[10] MODELING A HETEROGENEOUS METAL-SEMICONDUCTOR INTERFACE - CE ON SI(111) [J].

GRIONI, M ;

JOYCE, J ;

DELGIUDICE, M ;

ONEILL, DG ;

WEAVER, JH .

PHYSICAL REVIEW B, 1984, 30 (12) :7370-7373

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