ENERGY AND ORIENTATION DEPENDENCE OF ELECTRON-IRRADIATION-INDUCED DEFECTS IN INP

被引：38

作者：

SIBILLE, A ^{[1
]}

SUSKI, J ^{[1
]}

LEROUX, G ^{[1
]}

机构：

[1] UNIV PARIS 07,ECOLE NORMALE SUPER,CNRS,PHYS SOLIDES GRP,PARIS 05,FRANCE

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.30.1119

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1119 / 1121

页数：3

共 12 条

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APPLIED PHYSICS LETTERS, 1982, 40 (11) :990-992

[9] ANISOTROPIC-DEFECT INTRODUCTION IN GAAS BY ELECTRON-IRRADIATION [J].

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