COMMENTS ON THE FORMATION PROCESS AND THE ELECTRICAL NATURE OF LOCK-ON FILAMENT IN GE09AS20TE71 GLASS

被引:7
作者
HARO, M
MARQUEZ, E
ESQUIVIAS, L
JIMENEZGARAY, R
机构
关键词
D O I
10.1016/0022-3093(86)90275-9
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
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页码:255 / 259
页数:5
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共 11 条
[2]   STUDY OF THRESHOLD VOLTAGE AND CHANNEL FORMATION IN CHALCOGENIDE GLASSES [J].
JALAURIA, R ;
MANSINGH, A .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1974, 16 (02) :321-324
[3]   ELECTRICAL-CONDUCTIVITY AND PHENOMENOLOGY OF SWITCHING IN THE GLASSY ALLOY GE0.09AS0.20TE0.71 [J].
MARQUEZ, E ;
VILLARES, P ;
JIMENEZGARAY, R .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 74 (2-3) :195-204
[4]   THRESHOLD CHARACTERISTICS OF CHALCOGENIDE-GLASS MEMORY SWITCHES [J].
OWEN, AE ;
ROBERTSON, JM ;
MAIN, C .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :29-52
[5]   DIRECT OBSERVATION OF SWITCHING FILAMENTS IN CHALCOGENIDE GLASSES [J].
SAJI, M ;
KAO, KC .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 22 (01) :223-227
[6]   SOME FEATURES RELEVANT TO SWITCHING PROCESSES IN AMORPHOUS-SEMICONDUCTOR SI12GE10AS30TE48 [J].
SAJI, M ;
KAO, KC .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1975, 18 (02) :275-283
[7]  
Sie C. H., 1970, Journal of Non-Crystalline Solids, V4, P548, DOI 10.1016/0022-3093(70)90092-X
[8]  
Sie C.H, 1972, J NONCRYST SOLIDS, V8, P877
[9]   SWITCHING MECHANISMS IN AMORPHOUS-CHALCOGENIDE MEMORY DEVICES [J].
STEVENTON, AG .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 21 (03) :319-329
[10]   ELECTRICAL NATURE OF LOCK-ON FILAMENT IN AMORPHOUS SEMICONDUCTORS [J].
TANAKA, K .
SOLID STATE COMMUNICATIONS, 1970, 8 (01) :75-&