THE ANOMALOUS THRESHOLD VOLTAGE SHIFT OF N-MOSFET AND P-MOSFET UNDER FLOW AND REFLOW OF BPSG FILM WITH RTA AND/OR FURNACE

被引：3

作者：

HSIEH, JC ^{[1
]}

FANG, YK ^{[1
]}

CHEN, CW ^{[1
]}

TSAI, NS ^{[1
]}

LIN, MS ^{[1
]}

TSENG, FC ^{[1
]}

机构：

[1] TAIWAN SEMICOND MFG CO LTD,HSINCHU,TAIWAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 03期

关键词：

D O I：

10.1109/16.275238

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Different post oxide annealing technologies, i.e., furnace and/or RTA were done in Borophosphosilicate glass (BPSG) films flow and reflow. It is found that the threshold voltage shift is apparent in P-MOSFET but small in N-MOSFET for device with RTA reflow. Base on the charge pumping measurement, the donor-type interface states generated by RTA reflow process are supposed to play a major role in this shift. We explain the mechanism of RTA induced donor-like interface states in detail.

引用

页码：458 / 460

页数：3

共 11 条

[1] LOW-TEMPERATURE REDUCTION OF FAST SURFACE STATES ASSOCIATED WITH THERMALLY OXIDIZED SILICON [J].