PHOTOEMISSION STUDIES OF SURFACE AND INTERFACE STATES ON 3-5 COMPOUNDS

被引：57

作者：

SPICER, WE ^{[1
]}

CHYE, PW ^{[1
]}

GREGORY, PE ^{[1
]}

SUKEGAWA, T ^{[1
]}

BABALOLA, IA ^{[1
]}

机构：

[1] STANFORD UNIV,ELECTR LAB,PALO ALTO,CA 94304

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1976年 / 13卷 / 01期

关键词：

D O I：

10.1116/1.568858

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：233 / 240

页数：8

共 33 条

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[2] BELL RL, 1973, NEGATIVE ELECTRONS A
[3] SURFACE STATES OF (110) SURFACE OF GAAS
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[4] CALANDRA C, COMMUNICATION
[5] CHELIKOWSKI JR, UNPUBLISHED
[6] CHYE PW, UNPUBLISHED
[7] CLEMENS HJ, UNPUBLISHED
[8] ELECTRONIC PROPERTIES OF CLEAN CLEAVED (110) GAAS SURFACES
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[J]. SURFACE SCIENCE, 1971, 26 (02) : 587 - &
[9] ADSORPTION OF OXYGEN ON CLEAN CLEAVED (110) GALLIUM-ARSENIDE SURFACES
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[J]. PHYSICAL REVIEW B, 1974, 10 (12): : 5049 - 5056
[10] RELATION OF SCHOTTKY BARRIERS TO EMPTY SURFACE STATES ON 3-5 SEMICONDUCTORS
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[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (26) : 1624 - 1627