1ST DEMONSTRATION OF ALXGA1-XAS/SI MONOLITHIC TANDEM SOLAR-CELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：17

作者：

SHIMIZU, H

EGAWA, T

SOGA, T

JIMBO, T

UMENO, M

机构：

[1] Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku Nagoya

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 8B期

关键词：

TANDEM SOLAR CELL; ALGAAL/SI; GAAS/SI; MONOLITHIC; 2-TERMINAL; MOCVD; PHOTOCURRENT MATCHING; THERMAL DIFFUSION; 2-STEP GROWTH; THERMAL-CYCLE ANNEALING;

D O I：

10.1143/JJAP.31.L1150

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Al0.1Ga0.9As/Si and thin GaAs/Si monolithic two-terminal tandem cells, which are fabricated by thermal diffusion and metalorganic chemical vapor deposition (MOCVD), have exhibited the active area efficiencies of 16.3% and 15.6%, and the total area efficiencies of 13.8% and 13.1%, respectively. The key technologies required to fabricate the successful tandem cell are the formation of the p+-n junction in the Si substrate and the matching of the photocurrents between the top and the bottom cells.

引用

页码：L1150 / L1152

页数：3

共 8 条

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[8]

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