METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH OF UNDOPED GAAS WITH A LOW ELECTRON-CONCENTRATION ON A SI SUBSTRATE

We have successfully grown an undoped GaAs layer with a low electron concentration on Si by metalorganic chemical vapor desposition (MOCVD). The back and side edges of the Si substrate were covered with a Si3N 4/SiO2 stacked layer to suppress Si incorporation into GaAs by the gas phase transport mechanism during the MOCVD growth. A 3-μm-thick undoped GaAs layer with an electron concentration of 3×1014 cm-3, as low as the electron concentration of a GaAs layer grown on a GaAs substrate, was grown on the Si substrate even at 750°C.