EFFECTS OF GROWTH TEMPERATURE AND V/III RATIO ON MOCVD-GROWN GAAS-ON-SI

被引：14

作者：

NOZAKI, S ^{[1
]}

NOTO, N ^{[1
]}

EGAWA, T ^{[1
]}

WU, AT ^{[1
]}

SOGA, T ^{[1
]}

JIMBO, T ^{[1
]}

UMENO, M ^{[1
]}

机构：

[1] INTEL CORP,SANTA CLARA,CA 95052

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 01期

关键词：

Crystallinity; GaAs-on-Si; Growth temperature; MOCVD; Photoluminescence; Residual impurities; Surface morphology; TEM; V/III ratio; X-ray double crystal;

D O I：

10.1143/JJAP.29.138

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effects of growth temperature and V/III ratio on surface morphology, crystallinity and residual impurities of MOCVD-grown GaAs-on-Si have been studied. The effects are different from those on MOCVD-grown GaAs-on-GaAs. The difference arises from the heteroepitaxial problems. High silicon concentrations are found in all the GaAs-on-Si, and the electrical activation of silicon as a donor reaches 100% for higher growth temperatures. Crystallinity improves but surface morphology degrades with increasing growth temperature. The trade-off between crystallinity and surface morphology has been eliminated by the three-step growth process. © 1990 IOP Publishing Ltd.

引用

页码：138 / 144

页数：7

共 9 条

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J].