INFLUENCE OF GROWTH-PARAMETERS ON THE INCORPORATION OF RESIDUAL IMPURITIES IN GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：59

作者：

VANDEVEN, J

SCHOOT, HG

GILING, LJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 05期

关键词：

D O I：

10.1063/1.337254

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1648 / 1660

页数：13

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