HETEROINTERFACE STABILITY IN GAAS-ON-SI GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：24

作者：

PEARTON, SJ ^{[1
]}

MALM, DL ^{[1
]}

HEIMBROOK, LA ^{[1
]}

KOVALCHICK, J ^{[1
]}

ABERNATHY, CR ^{[1
]}

CARUSO, R ^{[1
]}

VERNON, SM ^{[1
]}

HAVEN, VE ^{[1
]}

机构：

[1] SPIRE CORP,BEDFORD,MA 01730

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 09期

关键词：

D O I：

10.1063/1.98333

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：682 / 684

页数：3

共 16 条

[1] INITIAL-STAGES OF EPITAXIAL-GROWTH OF GAAS ON (100) SILICON
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SMITH, AJ
TRAMONTANA, JC
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1856 - 1859
[2] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING
CHAND, N
PEOPLE, R
BAIOCCHI, FA
WECHT, KW
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (13) : 815 - 817
[3] RAPID ANNEALING OF GAAS - UNIFORMITY AND TEMPERATURE-DEPENDENCE OF ACTIVATION
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PEARTON, SJ
VELLACOLEIRO, GP
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) : 163 - 168
[4] PHOTOLUMINESCENCE AND X-RAY-PROPERTIES OF HETEROEPITAXIAL GALLIUM-ARSENIDE ON SILICON
DUNCAN, WM
LEE, JW
MATYI, RJ
LIU, HY
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) : 2161 - 2164
[5] DIFFUSION OF SILICON IN GALLIUM-ARSENIDE USING RAPID THERMAL-PROCESSING - EXPERIMENT AND MODEL
GREINER, ME
GIBBONS, JF
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 750 - 752
[6] ISHIDA K, 1986, JPN J APPL PHYS 2, V25, pL288, DOI 10.1143/JJAP.25.L288
[7] KOCH SM, 1986, MAT RES SOC S P, V67, P37
[8] KROEMER H, 1986, MATER RES SOC S P, V67, P3
[9] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES
LEE, JW
SHICHIJO, H
TSAI, HL
MATYI, RJ
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 31 - 33
[10] HIGH-QUALITY GAAS-MESFETS GROWN ON SILICON SUBSTRATES BY MOLECULAR-BEAM EPITAXY
MORKOC, H
PENG, CK
HENDERSON, T
KOPP, W
FISCHER, R
ERICKSON, LP
LONGERBONE, MD
YOUNGMAN, RC
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (07) : 381 - 383

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