RAPID ANNEALING OF GAAS - UNIFORMITY AND TEMPERATURE-DEPENDENCE OF ACTIVATION

[1] ANNEALING OF SELENIUM-IMPLANTED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (12) : 3503 - 3507

[2] CRYSTALLOGRAPHIC SLIP IN GAAS WAFERS ANNEALED USING INCOHERENT RADIATION [J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 304 - 306

[3] TRANSIENT THERMAL ANNEALING IN GAAS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) : 387 - 394

[4] NON-DESTRUCTIVE CHARACTERIZATION OF ELECTRICAL UNIFORMITY IN SEMI-INSULATING GAAS SUBSTRATES BY MICROWAVE PHOTOCONDUCTANCE TECHNIQUE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (06) : 931 - 948

[5] Hasegawa H., 1984, GaAs IC Symposium Technical Digest 1984 (Cat. No. 84CH2065-1), P41

[6] RAPID THERMAL ANNEALING OF SI+ IMPLANTED GAAS IN THE PRESENCE OF ARSENIC PRESSURE BY GAAS POWDER [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (03): : L193 - L195

[7] THE ELECTRICAL-PROPERTIES OF ZINC IMPLANTED GAAS [J]. SOLID-STATE ELECTRONICS, 1984, 27 (01) : 83 - 88

[8] RAPID THERMAL ANNEALING IN GAAS IC PROCESSING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2743 - 2748

[9] DIFFUSION PHENOMENA AND DEFECT GENERATION IN RAPIDLY ANNEALED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) : 1500 - 1504

[10] RELATIONSHIP BETWEEN SECONDARY DEFECTS AND ELECTRICAL ACTIVATION IN ION-IMPLANTED, RAPIDLY ANNEALED GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (01) : 38 - 40

[1] ANNEALING OF SELENIUM-IMPLANTED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (12) : 3503 - 3507

[2] CRYSTALLOGRAPHIC SLIP IN GAAS WAFERS ANNEALED USING INCOHERENT RADIATION [J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 304 - 306

[3] TRANSIENT THERMAL ANNEALING IN GAAS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) : 387 - 394

[4] NON-DESTRUCTIVE CHARACTERIZATION OF ELECTRICAL UNIFORMITY IN SEMI-INSULATING GAAS SUBSTRATES BY MICROWAVE PHOTOCONDUCTANCE TECHNIQUE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (06) : 931 - 948

[5] Hasegawa H., 1984, GaAs IC Symposium Technical Digest 1984 (Cat. No. 84CH2065-1), P41

[6] RAPID THERMAL ANNEALING OF SI+ IMPLANTED GAAS IN THE PRESENCE OF ARSENIC PRESSURE BY GAAS POWDER [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (03): : L193 - L195

[7] THE ELECTRICAL-PROPERTIES OF ZINC IMPLANTED GAAS [J]. SOLID-STATE ELECTRONICS, 1984, 27 (01) : 83 - 88

[8] RAPID THERMAL ANNEALING IN GAAS IC PROCESSING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2743 - 2748

[9] DIFFUSION PHENOMENA AND DEFECT GENERATION IN RAPIDLY ANNEALED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) : 1500 - 1504

[10] RELATIONSHIP BETWEEN SECONDARY DEFECTS AND ELECTRICAL ACTIVATION IN ION-IMPLANTED, RAPIDLY ANNEALED GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (01) : 38 - 40