DIFFUSION PHENOMENA AND DEFECT GENERATION IN RAPIDLY ANNEALED GAAS

被引:30
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PEARTON, SJ
CUMMINGS, KD
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10.1063/1.336083
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O59 [应用物理学];
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页码:1500 / 1504
页数:5
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[1]  
BENSALEM R, 1983, ELECTRON LETT, V10, P113
[2]   THE ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED COMPOUND SEMICONDUCTORS [J].
DONNELLY, JP .
NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :553-571
[3]   ION-IMPLANTATION IN III-V COMPOUNDS [J].
EISEN, FH .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4) :99-115
[4]   MODELING RAPID THERMAL-DIFFUSION OF ARSENIC AND BORON IN SILICON [J].
FAIR, RB ;
WORTMAN, JJ ;
LIU, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) :2387-2394
[5]   CHROMIUM GETTERING IN GAAS BY OXYGEN IMPLANTATION [J].
FAVENNEC, PN ;
GAUNEAU, M ;
LHARIDON, H ;
DEVEAUD, B ;
EVANS, CA ;
BLATTNER, RJ .
APPLIED PHYSICS LETTERS, 1981, 38 (04) :271-273
[6]   SEMI-INSULATING LAYERS OF GAAS BY OXYGEN IMPLANTATION [J].
FAVENNEC, PN .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2532-2536
[7]   ASYMPTOTIC ESTIMATES OF DIFFUSION TIMES FOR RAPID THERMAL ANNEALING [J].
FEHRIBACH, JD ;
GHEZ, R ;
OEHRLEIN, GS .
APPLIED PHYSICS LETTERS, 1985, 46 (04) :433-435
[8]  
GHANDHI S, 1983, VLSI FABRICATION PRI, P654
[9]   INFRARED RAPID THERMAL ANNEALING FOR GAAS DEVICE FABRICATION [J].
KOHZU, H ;
KUZUHARA, M ;
TAKAYAMA, Y .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :4998-5003
[10]   PASSIVATION OF THE DOMINANT DEEP LEVEL (EL2) IN GAAS BY HYDROGEN [J].
LAGOWSKI, J ;
KAMINSKA, M ;
PARSEY, JM ;
GATOS, HC ;
LICHTENSTEIGER, M .
APPLIED PHYSICS LETTERS, 1982, 41 (11) :1078-1080