RAPID THERMAL ANNEALING OF SI+ IMPLANTED GAAS IN THE PRESENCE OF ARSENIC PRESSURE BY GAAS POWDER

被引：20

作者：

HIRAMOTO, T

SAITO, T

IKOMA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1985年 / 24卷 / 03期

关键词：

D O I：

10.1143/JJAP.24.L193

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：L193 / L195

页数：3

相关论文

共 7 条

[1] RADIATION ANNEALING OF GAAS IMPLANTED WITH SI
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) : L124 - L126
[2] HALOGEN LAMP ANNEALING OF GAAS FOR MESFET FABRICATION
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[3] ANNEALING OF MG IMPLANTS IN GAAS USING INCOHERENT RADIATION
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[4] INCOHERENT ANNEALING OF IMPLANTED LAYERS IN GAAS
DAVIES, DE
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JULIAN, M
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (04): : 102 - 103
[5] RADIATION ANNEALING OF SI-IMPLANTED AND S-IMPLANTED GAAS
ITO, K
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MUROTANI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (05): : L299 - L300
[6] INFRARED RAPID THERMAL ANNEALING OF SI-IMPLANTED GAAS
KUZUHARA, M
KOHZU, H
TAKAYAMA, Y
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (08) : 755 - 758
[7] INFRARED RAPID ANNEALING OF ZN-IMPLANTED GAAS
SUZUKI, T
SAKURAI, H
ARAI, M
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (10) : 951 - 953