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ANNEALING OF SELENIUM-IMPLANTED GAAS
被引:17
作者
:
BARRETT, NJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND
UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND
BARRETT, NJ
[
1
]
GRANGE, JD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND
UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND
GRANGE, JD
[
1
]
SEALY, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND
UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND
SEALY, BJ
[
1
]
STEPHENS, KG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND
UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND
STEPHENS, KG
[
1
]
机构
:
[1]
UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND
来源
:
JOURNAL OF APPLIED PHYSICS
|
1984年
/ 56卷
/ 12期
关键词
:
D O I
:
10.1063/1.333916
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:3503 / 3507
页数:5
相关论文
共 35 条
[1]
APPLICATION OF THERMAL PULSE ANNEALING TO ION-IMPLANTED GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
ASBECK, PM
论文数:
0
引用数:
0
h-index:
0
ASBECK, PM
MILLER, DL
论文数:
0
引用数:
0
h-index:
0
MILLER, DL
BABCOCK, EJ
论文数:
0
引用数:
0
h-index:
0
BABCOCK, EJ
KIRKPATRICK, CG
论文数:
0
引用数:
0
h-index:
0
KIRKPATRICK, CG
[J].
IEEE ELECTRON DEVICE LETTERS,
1983,
4
(04)
: 81
-
84
[2]
ELECTRON-BEAM ANNEALING OF ZINC IMPLANTED GAAS TO CONTROL PROFILE BROADENING
BARRETT, NJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SURREY, DEPT ELECTR & ELECT ENGN, GUILDFORD GU2 5XH, SURREY, ENGLAND
UNIV SURREY, DEPT ELECTR & ELECT ENGN, GUILDFORD GU2 5XH, SURREY, ENGLAND
BARRETT, NJ
SEALY, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SURREY, DEPT ELECTR & ELECT ENGN, GUILDFORD GU2 5XH, SURREY, ENGLAND
UNIV SURREY, DEPT ELECTR & ELECT ENGN, GUILDFORD GU2 5XH, SURREY, ENGLAND
SEALY, BJ
[J].
ELECTRONICS LETTERS,
1984,
20
(04)
: 175
-
177
[3]
AIN CAPPED ANNEALING OF SE AND SN IMPLANTED SEMI-INSULATING GAAS
BENSALEM, R
论文数:
0
引用数:
0
h-index:
0
BENSALEM, R
BARRETT, NJ
论文数:
0
引用数:
0
h-index:
0
BARRETT, NJ
SEALY, BJ
论文数:
0
引用数:
0
h-index:
0
SEALY, BJ
[J].
ELECTRONICS LETTERS,
1983,
19
(03)
: 112
-
113
[4]
DAMAGE ANNEALING BEHAVIOR OF SE IMPLANTED GAAS
BHATTACHARYA, RS
论文数:
0
引用数:
0
h-index:
0
机构:
OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37830
BHATTACHARYA, RS
RAI, AK
论文数:
0
引用数:
0
h-index:
0
机构:
OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37830
RAI, AK
PRONOKO, PP
论文数:
0
引用数:
0
h-index:
0
机构:
OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37830
PRONOKO, PP
NARAYAN, J
论文数:
0
引用数:
0
h-index:
0
机构:
OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37830
NARAYAN, J
LING, SC
论文数:
0
引用数:
0
h-index:
0
机构:
OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37830
LING, SC
WILSON, SR
论文数:
0
引用数:
0
h-index:
0
机构:
OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37830
WILSON, SR
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1983,
44
(01)
: 61
-
69
[5]
FLUENCE DEPENDENCE OF DISPLACEMENT DAMAGE, RESIDUAL DEFECTS, AND ELECTRICAL-PROPERTIES OF HIGH-TEMPERATURE-ANNEALED SE-+-IMPLANTED GAAS
BHATTACHARYA, RS
论文数:
0
引用数:
0
h-index:
0
机构:
USAF,WRIGHT AERONAUT LABS,AVION LAB,WRIGHT PATTERSON AFB,OH 45433
BHATTACHARYA, RS
PRONKO, PP
论文数:
0
引用数:
0
h-index:
0
机构:
USAF,WRIGHT AERONAUT LABS,AVION LAB,WRIGHT PATTERSON AFB,OH 45433
PRONKO, PP
YEO, YK
论文数:
0
引用数:
0
h-index:
0
机构:
USAF,WRIGHT AERONAUT LABS,AVION LAB,WRIGHT PATTERSON AFB,OH 45433
YEO, YK
RAI, AK
论文数:
0
引用数:
0
h-index:
0
机构:
USAF,WRIGHT AERONAUT LABS,AVION LAB,WRIGHT PATTERSON AFB,OH 45433
RAI, AK
PARK, YS
论文数:
0
引用数:
0
h-index:
0
机构:
USAF,WRIGHT AERONAUT LABS,AVION LAB,WRIGHT PATTERSON AFB,OH 45433
PARK, YS
NARAYAN, J
论文数:
0
引用数:
0
h-index:
0
机构:
USAF,WRIGHT AERONAUT LABS,AVION LAB,WRIGHT PATTERSON AFB,OH 45433
NARAYAN, J
[J].
JOURNAL OF APPLIED PHYSICS,
1982,
53
(07)
: 4821
-
4825
[6]
THERMAL EXPANSION OF SPUTTERED SILICON NITRIDE FILMS
BURKHARDT, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Components Division, East Fishkill Laboratory, Hopewell Junction, New York
BURKHARDT, PJ
MARVEL, RF
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Components Division, East Fishkill Laboratory, Hopewell Junction, New York
MARVEL, RF
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(06)
: 864
-
+
[7]
TRANSIENT ANNEALING OF SELENIUM-IMPLANTED GALLIUM-ARSENIDE USING A GRAPHITE STRIP HEATER
CHAPMAN, RL
论文数:
0
引用数:
0
h-index:
0
CHAPMAN, RL
FAN, JCC
论文数:
0
引用数:
0
h-index:
0
FAN, JCC
DONNELLY, JP
论文数:
0
引用数:
0
h-index:
0
DONNELLY, JP
TSAUR, BY
论文数:
0
引用数:
0
h-index:
0
TSAUR, BY
[J].
APPLIED PHYSICS LETTERS,
1982,
40
(09)
: 805
-
807
[8]
SILICON-ION-IMPLANTED AND SELENIUM-ION-IMPLANTED GAAS REPRODUCIBLY ANNEALED AT TEMPERATURES UP TO 950DEGREESC
DONNELLY, JP
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
DONNELLY, JP
LINDLEY, WT
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
LINDLEY, WT
HURWITZ, CE
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
HURWITZ, CE
[J].
APPLIED PHYSICS LETTERS,
1975,
27
(01)
: 41
-
43
[9]
EVAPORATION OF GAAS UNDER EQUILIBRIUM AND NONEQUILIBRIUM CONDITIONS USING A MODULATED BEAM TECHNIQUE
FOXON, CT
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
FOXON, CT
HARVEY, JA
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
HARVEY, JA
JOYCE, BA
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
JOYCE, BA
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1973,
34
(10)
: 1693
-
&
[10]
EFFICIENT DOPING OF GAAS BY SE+ ION IMPLANTATION
FOYT, AG
论文数:
0
引用数:
0
h-index:
0
机构:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
FOYT, AG
DONNELLY, JP
论文数:
0
引用数:
0
h-index:
0
机构:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
DONNELLY, JP
LINDLEY, WT
论文数:
0
引用数:
0
h-index:
0
机构:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
LINDLEY, WT
[J].
APPLIED PHYSICS LETTERS,
1969,
14
(12)
: 372
-
&
←
1
2
3
4
→
共 35 条
[1]
APPLICATION OF THERMAL PULSE ANNEALING TO ION-IMPLANTED GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
ASBECK, PM
论文数:
0
引用数:
0
h-index:
0
ASBECK, PM
MILLER, DL
论文数:
0
引用数:
0
h-index:
0
MILLER, DL
BABCOCK, EJ
论文数:
0
引用数:
0
h-index:
0
BABCOCK, EJ
KIRKPATRICK, CG
论文数:
0
引用数:
0
h-index:
0
KIRKPATRICK, CG
[J].
IEEE ELECTRON DEVICE LETTERS,
1983,
4
(04)
: 81
-
84
[2]
ELECTRON-BEAM ANNEALING OF ZINC IMPLANTED GAAS TO CONTROL PROFILE BROADENING
BARRETT, NJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SURREY, DEPT ELECTR & ELECT ENGN, GUILDFORD GU2 5XH, SURREY, ENGLAND
UNIV SURREY, DEPT ELECTR & ELECT ENGN, GUILDFORD GU2 5XH, SURREY, ENGLAND
BARRETT, NJ
SEALY, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SURREY, DEPT ELECTR & ELECT ENGN, GUILDFORD GU2 5XH, SURREY, ENGLAND
UNIV SURREY, DEPT ELECTR & ELECT ENGN, GUILDFORD GU2 5XH, SURREY, ENGLAND
SEALY, BJ
[J].
ELECTRONICS LETTERS,
1984,
20
(04)
: 175
-
177
[3]
AIN CAPPED ANNEALING OF SE AND SN IMPLANTED SEMI-INSULATING GAAS
BENSALEM, R
论文数:
0
引用数:
0
h-index:
0
BENSALEM, R
BARRETT, NJ
论文数:
0
引用数:
0
h-index:
0
BARRETT, NJ
SEALY, BJ
论文数:
0
引用数:
0
h-index:
0
SEALY, BJ
[J].
ELECTRONICS LETTERS,
1983,
19
(03)
: 112
-
113
[4]
DAMAGE ANNEALING BEHAVIOR OF SE IMPLANTED GAAS
BHATTACHARYA, RS
论文数:
0
引用数:
0
h-index:
0
机构:
OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37830
BHATTACHARYA, RS
RAI, AK
论文数:
0
引用数:
0
h-index:
0
机构:
OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37830
RAI, AK
PRONOKO, PP
论文数:
0
引用数:
0
h-index:
0
机构:
OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37830
PRONOKO, PP
NARAYAN, J
论文数:
0
引用数:
0
h-index:
0
机构:
OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37830
NARAYAN, J
LING, SC
论文数:
0
引用数:
0
h-index:
0
机构:
OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37830
LING, SC
WILSON, SR
论文数:
0
引用数:
0
h-index:
0
机构:
OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37830
WILSON, SR
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1983,
44
(01)
: 61
-
69
[5]
FLUENCE DEPENDENCE OF DISPLACEMENT DAMAGE, RESIDUAL DEFECTS, AND ELECTRICAL-PROPERTIES OF HIGH-TEMPERATURE-ANNEALED SE-+-IMPLANTED GAAS
BHATTACHARYA, RS
论文数:
0
引用数:
0
h-index:
0
机构:
USAF,WRIGHT AERONAUT LABS,AVION LAB,WRIGHT PATTERSON AFB,OH 45433
BHATTACHARYA, RS
PRONKO, PP
论文数:
0
引用数:
0
h-index:
0
机构:
USAF,WRIGHT AERONAUT LABS,AVION LAB,WRIGHT PATTERSON AFB,OH 45433
PRONKO, PP
YEO, YK
论文数:
0
引用数:
0
h-index:
0
机构:
USAF,WRIGHT AERONAUT LABS,AVION LAB,WRIGHT PATTERSON AFB,OH 45433
YEO, YK
RAI, AK
论文数:
0
引用数:
0
h-index:
0
机构:
USAF,WRIGHT AERONAUT LABS,AVION LAB,WRIGHT PATTERSON AFB,OH 45433
RAI, AK
PARK, YS
论文数:
0
引用数:
0
h-index:
0
机构:
USAF,WRIGHT AERONAUT LABS,AVION LAB,WRIGHT PATTERSON AFB,OH 45433
PARK, YS
NARAYAN, J
论文数:
0
引用数:
0
h-index:
0
机构:
USAF,WRIGHT AERONAUT LABS,AVION LAB,WRIGHT PATTERSON AFB,OH 45433
NARAYAN, J
[J].
JOURNAL OF APPLIED PHYSICS,
1982,
53
(07)
: 4821
-
4825
[6]
THERMAL EXPANSION OF SPUTTERED SILICON NITRIDE FILMS
BURKHARDT, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Components Division, East Fishkill Laboratory, Hopewell Junction, New York
BURKHARDT, PJ
MARVEL, RF
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Components Division, East Fishkill Laboratory, Hopewell Junction, New York
MARVEL, RF
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(06)
: 864
-
+
[7]
TRANSIENT ANNEALING OF SELENIUM-IMPLANTED GALLIUM-ARSENIDE USING A GRAPHITE STRIP HEATER
CHAPMAN, RL
论文数:
0
引用数:
0
h-index:
0
CHAPMAN, RL
FAN, JCC
论文数:
0
引用数:
0
h-index:
0
FAN, JCC
DONNELLY, JP
论文数:
0
引用数:
0
h-index:
0
DONNELLY, JP
TSAUR, BY
论文数:
0
引用数:
0
h-index:
0
TSAUR, BY
[J].
APPLIED PHYSICS LETTERS,
1982,
40
(09)
: 805
-
807
[8]
SILICON-ION-IMPLANTED AND SELENIUM-ION-IMPLANTED GAAS REPRODUCIBLY ANNEALED AT TEMPERATURES UP TO 950DEGREESC
DONNELLY, JP
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
DONNELLY, JP
LINDLEY, WT
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
LINDLEY, WT
HURWITZ, CE
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
HURWITZ, CE
[J].
APPLIED PHYSICS LETTERS,
1975,
27
(01)
: 41
-
43
[9]
EVAPORATION OF GAAS UNDER EQUILIBRIUM AND NONEQUILIBRIUM CONDITIONS USING A MODULATED BEAM TECHNIQUE
FOXON, CT
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
FOXON, CT
HARVEY, JA
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
HARVEY, JA
JOYCE, BA
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
JOYCE, BA
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1973,
34
(10)
: 1693
-
&
[10]
EFFICIENT DOPING OF GAAS BY SE+ ION IMPLANTATION
FOYT, AG
论文数:
0
引用数:
0
h-index:
0
机构:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
FOYT, AG
DONNELLY, JP
论文数:
0
引用数:
0
h-index:
0
机构:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
DONNELLY, JP
LINDLEY, WT
论文数:
0
引用数:
0
h-index:
0
机构:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
LINDLEY, WT
[J].
APPLIED PHYSICS LETTERS,
1969,
14
(12)
: 372
-
&
←
1
2
3
4
→