ELECTRON-BEAM ANNEALING OF ZINC IMPLANTED GAAS TO CONTROL PROFILE BROADENING

被引：11

作者：

BARRETT, NJ ^{[1
]}

SEALY, BJ ^{[1
]}

机构：

[1] UNIV SURREY, DEPT ELECTR & ELECT ENGN, GUILDFORD GU2 5XH, SURREY, ENGLAND

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 04期

关键词：

D O I：

10.1049/el:19840117

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：175 / 177

页数：3

共 8 条

[1]

DAVIES DE, 1983, IEEE ELECTR DEVICE L, V4, P356, DOI 10.1109/EDL.1983.25761

[2]

GAVRILOV AA, 1975, DIFFUSION ZINC CADMI, V8, P1455

[3] DOPING PROFILES IN ZN-IMPLANTED GAAS AFTER LASER ANNEALING [J].

INADA, T ;

KATO, S ;

MAEDA, Y ;

TOKUNAGA, K .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) :6000-6002

[4] REDISTRUBUTION OF ZN IMPLANTED INTO GAAS [J].

KASAHARA, J ;

SAKURAI, H ;

KATO, Y ;

WATANABE, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (02) :L103-L105

[5] ELECTRICAL, RUTHERFORD BACKSCATTERING AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF FURNACE ANNEALED ZINC IMPLANTED GAAS [J].

KULAR, SS ;

SEALY, BJ ;

STEPHENS, KG ;

SADANA, D ;

BOOKER, GR .

SOLID-STATE ELECTRONICS, 1980, 23 (08) :831-&

[6] MULTIPLY SCANNED ELECTRON-BEAM ANNEALING OF DUAL IMPLANTS IN GAAS [J].

SHAHID, MA ;

MOFFATT, S ;

BARRETT, NJ ;

SEALY, BJ ;

PUTTICK, KE .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1983, 70 (1-4) :291-299

[7] ANOMALOUS DIFFUSION PROFILES OF ZINC IN GAAS [J].

TUCK, B ;

KADHIM, MAH .

JOURNAL OF MATERIALS SCIENCE, 1972, 7 (05) :581-&

[8]

ZOLCH R, 1977, ION IMPLANTATION SEM, P593

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