MULTIPLY SCANNED ELECTRON-BEAM ANNEALING OF DUAL IMPLANTS IN GAAS

被引：9

作者：

SHAHID, MA ^{[1
]}

MOFFATT, S ^{[1
]}

BARRETT, NJ ^{[1
]}

SEALY, BJ ^{[1
]}

PUTTICK, KE ^{[1
]}

机构：

[1] UNIV SURREY, DEPT ELECTR & ELECT ENGN, GUILDFORD GU2 5XH, SURREY, ENGLAND

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1983年 / 70卷 / 1-4期

关键词：

D O I：

10.1080/00337578308219224

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：291 / 299

页数：9

共 12 条

[1] RADIATION ANNEALING OF GAAS IMPLANTED WITH SI [J].

ARAI, M ;

NISHIYAMA, K ;

WATANABE, N .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) :L124-L126

[2]

BUJATTI M, 1982, APPL PHYS LETT, P334

[3] INCOHERENT ANNEALING OF IMPLANTED LAYERS IN GAAS [J].

DAVIES, DE ;

MCNALLY, PJ ;

LORENZO, JP ;

JULIAN, M .

ELECTRON DEVICE LETTERS, 1982, 3 (04) :102-103

[4] CHARACTERIZATION OF MULTIPLE-SCAN ELECTRON-BEAM ANNEALING METHOD [J].

MCMAHON, RA ;

AHMED, H ;

DOBSON, RM ;

SPEIGHT, JD .

ELECTRONICS LETTERS, 1980, 16 (08) :295-297

[5]

MOFFATT S, UNPUB

[6] TEM STRUCTURAL STUDIES ON SE+ IMPLANTED GAAS [J].

SADANA, DK ;

BOOKER, GR .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 42 (1-2) :35-43

[7]

Sealy B. J., 1982, Microelectronics Journal, V13, P21, DOI 10.1016/S0026-2692(82)80044-X

[8]

SEALY BJ, 1979, I PHYS C SER, V46, P476

[9] ELECTRON-BEAM ANNEALING OF SELENIUM-IMPLANTED GALLIUM-ARSENIDE [J].

SHAH, NJ ;

AHMED, H ;

LEIGH, PA .

APPLIED PHYSICS LETTERS, 1981, 39 (04) :322-324

[10] ACTIVATION OF LOW-DOSE SILICON IMPLANTS IN GAAS BY MULTIPLY SCANNED ELECTRON-BEAMS [J].

SHAH, NJ ;

AHMED, H ;

SANDERS, IR ;

SINGLETON, JF .

ELECTRONICS LETTERS, 1980, 16 (11) :433-434

← 1 2 →