ELECTRON-BEAM ANNEALING OF SELENIUM-IMPLANTED GALLIUM-ARSENIDE

被引：12

作者：

SHAH, NJ ^{[1
]}

AHMED, H ^{[1
]}

LEIGH, PA ^{[1
]}

机构：

[1] BRITISH TELECOM RES LABS,IPSWICH IP5 7RE,ENGLAND

来源：

关键词：

D O I：

10.1063/1.92707

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：322 / 324

页数：3

共 6 条

[1]

AMBRIDGE T, 1979, ELECTRON LETT, V15, P649

[2]

DONELLY JP, 1977, I PHYS C SER B, V33, P166

[3] CHARACTERIZATION OF MULTIPLE-SCAN ELECTRON-BEAM ANNEALING METHOD [J].

MCMAHON, RA ;

AHMED, H ;

DOBSON, RM ;

SPEIGHT, JD .

MCMAHON, RA ;

AHMED, H ;

CULLIS, AG .

[5]

Shah N. J., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P201

SHAH, NJ ;

AHMED, H ;

SANDERS, IR ;

SINGLETON, JF .