COMPARATIVE STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF SCANNING-ELECTRON AND PULSED-LASER-ANNEALED SILICON

被引：11

作者：

MCMAHON, RA ^{[1
]}

AHMED, H ^{[1
]}

CULLIS, AG ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 11期

关键词：

D O I：

10.1063/1.91724

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1016 / 1018

页数：3

共 12 条

[1] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J].

AUSTON, DH ;

SURKO, CM ;

VENKATESAN, TNC ;

SLUSHER, RE ;

GOLOVCHENKO, JA .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :437-440

[2] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION [J].

CELLER, GK ;

POATE, JM ;

KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1978, 32 (08) :464-466

[3] DEVICE FOR LASER-BEAM DIFFUSION AND HOMOGENIZATION [J].

CULLIS, AG ;

WEBBER, HC ;

BAILEY, P .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1979, 12 (08) :688-689

[4] CORRELATION OF THE STRUCTURE AND ELECTRICAL-PROPERTIES OF ION-IMPLANTED AND LASER-ANNEALED SILICON [J].

CULLIS, AG ;

WEBBER, HC ;

CHEW, NG .

APPLIED PHYSICS LETTERS, 1980, 36 (07) :547-550

[5] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON [J].

GAT, A ;

GIBBONS, JF ;

MAGEE, TJ ;

PENG, J ;

DELINE, VR ;

WILLIAMS, P ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1978, 32 (05) :276-278

[6]

KHAIBULLIN IB, 1977, SOV PHYS SEMICOND+, V11, P190

[7] DIRECT DEVICE FABRICATION BY SELECTED AREA E-BEAM ANNEALING [J].

MCMAHON, RA ;

AHMED, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1840-1842

[8] ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON [J].

MCMAHON, RA ;

AHMED, H .

ELECTRONICS LETTERS, 1979, 15 (02) :45-47

[9]

MCMAHON RA, 1980, ELECTRON LETT, V16

[10] SCANNING-ELECTRON-BEAM ANNEALING OF ARSENIC-IMPLANTED SILICON [J].

REGOLINI, JL ;

GIBBONS, JF ;

SIGMON, TW ;

PEASE, RFW ;

MAGEE, TJ ;

PENG, J .

APPLIED PHYSICS LETTERS, 1979, 34 (06) :410-412

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