DEFECT-RELATED SI DIFFUSION IN GAAS ON SI

被引：28

作者：

FREUNDLICH, A ^{[1
]}

LEYCURAS, A ^{[1
]}

GRENET, JC ^{[1
]}

GRATTEPAIN, C ^{[1
]}

机构：

[1] CNRS,PHYS SOLIDE LAB,F-92190 MEUDON,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 26期

关键词：

D O I：

10.1063/1.100392

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2635 / 2637

页数：3

共 12 条

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[3]

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[5] EVIDENCE BY RAMAN-SPECTROSCOPY AND X-RAY-DIFFRACTION OF A STRONG INFLUENCE OF H2O TRACES ON THE METALORGANIC VAPOR-PHASE EPITAXY OF GAAS ON SI [J].

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VERIE, C ;

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[6] INFLUENCE OF MOVPE GROWTH-PARAMETERS ON THE STRUCTURAL AND OPTICAL-PROPERTIES OF GAAS ON SI(100) [J].

FREUNDLICH, A ;

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[7]

FREUNDLICH A, 1987, 1987 E MRS M, V16, P337

[8] THE ESTIMATION OF DISLOCATION DENSITIES IN METALS FROM X-RAY DATA [J].

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[9]

LEE JW, 1986, HETEROEPITAXY SILICO, P29

[10] IMPROVEMENTS IN THE HETEROEPITAXY OF GAAS ON SI [J].

LUM, RM ;

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LAMONT, MG .

APPLIED PHYSICS LETTERS, 1987, 51 (01) :36-38

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