IMPROVEMENTS IN THE HETEROEPITAXY OF GAAS ON SI

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11): : L843 - L845

[2] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (13) : 815 - 817

[3] FAN JCC, 1986, MATERIALS RES SOC S, V67

[4] Harris T., COMMUNICATION

[5] Hirsch P.B., 1956, PROGR METAL PHYSICS

[6] NUCLEATION OF GAAS ON SI-EXPERIMENTAL EVIDENCE FOR A 3-DIMENSIONAL CRITICAL TRANSITION [J]. APPLIED PHYSICS LETTERS, 1987, 50 (13) : 851 - 853

[7] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 31 - 33

[8] AN INTEGRATED LABORATORY-REACTOR MOCVD SAFETY SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 75 (03) : 421 - 428

[9] SI(001)-2X1 SINGLE-DOMAIN STRUCTURE OBTAINED BY HIGH-TEMPERATURE ANNEALING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01): : L78 - L80

[10] PHOTOLUMINESCENCE AND PHOTOLUMINESCENCE EXCITATION-SPECTRA OF GAAS GROWN DIRECTLY ON SI [J]. SOLID STATE COMMUNICATIONS, 1986, 58 (07) : 457 - 460

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11): : L843 - L845

[2] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (13) : 815 - 817

[3] FAN JCC, 1986, MATERIALS RES SOC S, V67

[4] Harris T., COMMUNICATION

[5] Hirsch P.B., 1956, PROGR METAL PHYSICS

[6] NUCLEATION OF GAAS ON SI-EXPERIMENTAL EVIDENCE FOR A 3-DIMENSIONAL CRITICAL TRANSITION [J]. APPLIED PHYSICS LETTERS, 1987, 50 (13) : 851 - 853

[7] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 31 - 33

[8] AN INTEGRATED LABORATORY-REACTOR MOCVD SAFETY SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 75 (03) : 421 - 428

[9] SI(001)-2X1 SINGLE-DOMAIN STRUCTURE OBTAINED BY HIGH-TEMPERATURE ANNEALING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01): : L78 - L80

[10] PHOTOLUMINESCENCE AND PHOTOLUMINESCENCE EXCITATION-SPECTRA OF GAAS GROWN DIRECTLY ON SI [J]. SOLID STATE COMMUNICATIONS, 1986, 58 (07) : 457 - 460