A NOVEL PASSIVATION TECHNOLOGY OF INGAAS SURFACES USING SI INTERFACE CONTROL LAYER AND ITS APPLICATION TO FIELD-EFFECT TRANSISTOR

被引：16

作者：

SUZUKI, S

KODAMA, S

HASEGAWA, H

机构：

[1] HOKKAIDO UNIV,DEPT ELECT ENGN,SAPPORO,HOKKAIDO 060,JAPAN

[2] HOKKAIDO UNIV,INTERFACE QUANTUM ELECTR RES CTR,SAPPORO,HOKKAIDO 060,JAPAN

来源：

SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 09期

关键词：

INGAAS; FET; PASSIVATION; MIS;

D O I：

10.1016/0038-1101(95)00046-V

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel passivation technique using the MBE grown ultra-thin Si interface control layer (Si ICL) is shown to be applicable to an air-exposed InGaAs surface by introducing the HF surface treatment. A minimum interface state density of 8 x 10(10) cm(-2)eV(-1) was achieved. The details of the processing together with WS and electrical characterization are presented. To demonstrate the effectiveness of the novel technique, metal-insulator-semiconductor field effect transistor (MISFET) structures were fabricated, and their electrical characteristics were evaluated.

引用

页码：1679 / 1683

页数：5