SPECTROSCOPIE DE DEFAUTS PONCTUELS

被引：4

作者：

BALKANSKI, M

DASILVA, E

NAZAREWICZ, W

机构：

来源：

JOURNAL DE PHYSIQUE | 1963年 / 24卷 / 07期

关键词：

D O I：

10.1051/jphys:01963002407045100

中图分类号：

学科分类号：

摘要：

引用

页码：451 / 457

页数：7

共 18 条

[1]

BALKANSKI M, 1960, CR HEBD ACAD SCI, V251, P1277

[2] DOUBLE PHONON PROCESSES IN CADMIUM SULFIDE [J].

BALKANSKI, M ;

BESSON, JM .

JOURNAL OF APPLIED PHYSICS, 1961, 32 :2292-&

[3] SINGLE PHONON ABSORPTION BANDS IN FAST NEUTRON IRRADIATED SILICON [J].

BALKANSKI, M ;

NAZAREWICZ, W .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (JUN) :573-&

[4]

BALKANSKI M, UNPUB

[5] INTERSTITIAL VERSUS SUBSTITUTIONAL OXYGEN IN SILICON [J].

BOND, WL ;

KAISER, W .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (1-2) :44-45

[6]

DEUTSH T, 1962, SEMICONDUCTOR C EXET

[7]

DOLLING G, 1962, SEP S IN SCATT NEUTR

[8] INFRARED ABSORPTION AND PHOTOCONDUCTIVITY IN IRRADIATED SILICON [J].

FAN, HY ;

RAMDAS, AK .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1127-1134

[9] INFRARED ABSORPTION OF OXYGEN IN SILICON [J].

HROSTOWSKI, HJ ;

KAISER, RH .

PHYSICAL REVIEW, 1957, 107 (04) :966-972

[10] LATTICE ABSORPTION BANDS IN SILICON [J].

JOHNSON, FA .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 73 (470) :265-272

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