DETERMINATION OF STRAIN DISTRIBUTIONS IN ION-IMPLANTED MAGNETIC-BUBBLE GARNETS APPLYING X-RAY DYNAMICAL THEORY

被引：16

作者：

TAKEUCHI, T

OHTA, N

SUGITA, Y

FUKUHARA, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 02期

关键词：

D O I：

10.1063/1.332080

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：715 / 721

页数：7

共 15 条

[1]

ALMASI GS, 1974, AIP C P, V24, P630

[2] EFFECT OF ALPHA IRRADIATION ON X-RAY DIFFRACTION PROFILES OF SILICON SINGLE CRYSTALS [J].

BURGEAT, J ;

COLELLA, R .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3505-&

[3] ASYMMETRIC X-RAY BRAGG REFLECTION AND SHALLOW STRAIN DISTRIBUTION IN SILICON SINGLE-CRYSTALS [J].

FUKUHARA, A ;

TAKANO, Y .

JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1977, 10 (AUG1) :287-290

[4] DETERMINATION OF STRAIN DISTRIBUTIONS FROM X-RAY BRAGG REFLECTION BY SILICON SINGLE-CRYSTALS [J].

FUKUHARA, A ;

TAKANO, Y .

ACTA CRYSTALLOGRAPHICA SECTION A, 1977, 33 (JAN1) :137-142

[5]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[6] DIFFERENTIAL ETCHING OF ION-IMPLANTED GARNET [J].

JOHNSON, WA ;

NORTH, JC ;

WOLFE, R .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) :4753-4757

[7] BUBBLE PROPAGATION BY DISKS FORMED BY ION-IMPLANTATION [J].

JOUVE, H ;

SEGALINI, S ;

PIAGUET, J .

IEEE TRANSACTIONS ON MAGNETICS, 1976, 12 (06) :660-662

[8]

KOMENOU K, 1978, J APPL PHYS, V49, P5816, DOI 10.1063/1.324597

[9] X-RAY STUDY OF LATTICE STRAIN IN BORON IMPLANTED LASER ANNEALED SILICON [J].

LARSON, BC ;

BARHORST, JF .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3181-3185

[10]

LIN YS, 1977, IEEE T MAGN, V13, P1744

← 1 2 →