P-N-JUNCTION SILICON ELECTRODE COATED WITH NOBLE-METAL FOR EFFICIENT SOLAR PHOTOELECTROLYSIS OF HYDROGEN IODIDE

被引：37

作者：

NAKATO, Y ^{[1
]}

YOSHIMURA, M ^{[1
]}

HIRAMOTO, M ^{[1
]}

TSUMURA, A ^{[1
]}

MURAHASHI, T ^{[1
]}

TSUBOMURA, H ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN SCI,DEPT CHEM,CHEM CONVERS SOLAR ENERGY LAB,TOYONAKA,OSAKA 560,JAPAN

来源：

关键词：

D O I：

10.1246/bcsj.57.355

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：355 / 360

页数：6

共 36 条

SKOTHEIM, T ;

LUNDSTROM, I ;

PREJZA, J .

THOMPSON, L ;

DUBOW, J ;

RAJESHWAR, K .

[33]

TOMKIEWICZ M, 1977, J ELECTROCHEM SOC, V124, P1436, DOI 10.1149/1.2133669

[34] PHOTOELECTROLYSIS OF WATER WITH SEMICONDUCTORS [J].

TOMKIEWICZ, M ;

FAY, H .

APPLIED PHYSICS, 1979, 18 (01) :1-28

[35]

Tu K. N., 1978, Thin films. Interdiffusion and reactions, P359

WRIGHTON, MS .